Understanding the power MOSFET's UIS and avalanche energy - Power Circuit - Circuit Diagram

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In the data sheet of the power MOSFET, parameters such as single-pulse avalanche energy EAS, avalanche current IAR, and repetitive pulse avalanche energy EAR are usually included, and many electronic engineers rarely consider these parameters and the power system during the design of the power system. What kind of connection is applied, how to evaluate the impact of these parameters on the actual application, and under which application conditions should be considered. This article will address these issues and explore the operating conditions of power MOSFETs under unclamped inductive switching conditions.

Definition and measurement of EAS, IAR and EAR
The avalanche energy of a MOSFET is related to the thermal performance and operating state of the device. The final performance is the rise in temperature, which is related to the power level and the thermal performance of the silicon package. The thermal response of a power semiconductor to a fast power pulse (time 100-200 μs) can be illustrated by Equation 1:

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