The Chinese name is an insulated shed bipolar transistor.
The insulated gate type FET has a small driving power and a fast switching speed, but the conduction voltage drop is large and the current carrying density is small.
lGBT combines the advantages of the above two devices, with low drive power and reduced saturation voltage.
1. IGBT cognitive skills:
(1) 1GBT shape and graphic symbol The shape of the IGBT is the same as that of the power transistor and the power FET, and has various package forms depending on the power. The three pins of the IGBT are the gate G, the collector C, and the emitter E in this order. The shape of a common IGBT is shown below.
2. Detecting methods and techniques for IGBTs The collector and emitter of IGBTs with damper diodes are single-passed, and the reverse measurement (black pen connected to the emitter, red pen connected to the collector) has a small resistance value, and the forward measurement resistance The value is infinite. The positive and negative resistance values ​​between the control gate and the collector and emitter are infinite.
3. IGBT replacement and replacement.
The same type of components should be used for replacement. The parameters of the replacement component in emergency must meet or exceed the standards of the original component.
Note: If the replacement part is an IGBT without a damper diode, add a damper diode between the collector and the emitter. The anode of the damper diode is connected to the emitter and the cathode is connected to the collector. The maximum reverse voltage of the damper diode should be above 1500V.
Therefore, it is important to understand the model of the original IGBT before replacement. This is also a good habit that electronic circuit enthusiasts must develop!
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